Interface Engineering for Stable, High-Performance Photoanodes
We demonstrated that
Significance & impact
The successful interface-engineering strategy provides a route to stable, high-performance
Top: High-resolution transmission-electron microscope image of a cross-section of
Bottom: Current-density vs.
- Ni-oxide films formed by reactive sputtering provide a transparent, anti-reflective, conductive, chemically stable, inherently catalytic coating that stabilizes many efficient and technologically important
- Significantly high open-circuit voltage (Voc) values for such stabilized systems have been obtained from electrodes formed by deposition of a NiOx coating onto a buried np+
homojunction. n-Si/SiOx/ CoOx/ NiOx photoanodesin contact with 1 M KOH (aq) and under simulated 1-Sun illumination yielded photocurrent-onset potentials of ∼ −240 mVrelative to formal potentialfor water oxidation (E0’(O2/H2O)) and current densities of ∼ 28 mA·cm−2at E0’(O2/H2O) and provided continuous, stable oxygen evolution for 1700 h.
- Interfacia cobalt oxide layers potentially simplify the photoelectrod processing.